1 trench gate design dual igbtmod? 100 amperes/600 volts CM100DUS-12F powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 outline drawing and circuit diagram q (2 places) cm a b s t t u u w v d r k k c2e1 e2 c1 #110 tab x h thick (4 places) x y m n e f g f j e2 g2 g1 e1 p - nuts x z deep (3 places) t c measured point c l c2e1 rtc rtc e2 e1 g1 c1 e2 g2 1 dimensions inches millimeters a 3.70 94.0 b 1.89 48.0 c 1.18 +0.04/-0.02 30.0 +1.0/-0.5 d 3.150.01 80.00.25 e 0.43 11.0 f 0.16 4.0 g 0.71 18.0 h 0.02 0.5 j 0.53 13.5 k 0.91 23.0 l 0.83 21.2 m 0.67 17.0 dimensions inches millimeters n 0.28 7.0 p m5 m5 q 0.26 dia. 6.5 dia. r 0.02 4.0 s 0.30 7.5 t 0.63 16.0 u 0.10 2.5 v 1.0 25.0 w 0.94 24.0 x 0.51 13.0 y 0.47 12.0 z 0.47 12.0 description: powerex igbtmod? modules are designed for use in high frequency applications; 30 khz for hard switching applications and 60 to 70 khz for soft switching applications. each module consists of two igbt transistors in a half-bridge con?guration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simpli?ed system assem - bly and thermal management. features: low v ce(sat) low e sw(off) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: power supplies induction heating welders ordering information: example: select the complete module number you desire from the table - i.e. CM100DUS-12F is a 600v (v ces ), 100 ampere dual igbtmod? power module. current rating v ces type amperes volts (x 50) cm 100 12
2 CM100DUS-12F trench gate design dual igbtmod? 100 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 2 absolute maximum ratings, o l ml ,m junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25c) i c 100 amperes peak collector current i cm 200* amperes emitter current** (t c = 25c) i e 100 amperes peak emitter current** i em 200* amperes maximum collector dissipation (t c = 25c, t j 150c) p c 350 watts mounting torque, m5 main terminal C 31 in-lb mounting torque, m6 mounting C 40 in-lb weight C 310 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, o ml o o collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 20 a gate-emitter threshold voltage v ge(th) i c = 10ma, v ce = 10v 5 6 7 volts collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c 1.7 2.0 2.7 volts i c = 100a, v ge = 15v, t j = 125c C 1.95 C volts total gate charge q g v cc = 300v, i c = 100a, v ge = 15v C 620 C nc emitter-collector voltage** v ec i e = 100a, v ge = 0v C C 2.6 volts **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). dynamic electrical characteristics, o ml o o input capacitance c ies C C 27 nf output capacitance c oes v ce = 10v, v ge = 0v C C 1.8 nf reverse transfer capacitance c res C C 1 nf resistive turn-on delay time t d(on) v cc = 300v, i c = 100a, C C 100 ns load rise time t r v ge1 = v ge2 = 15v, C C 80 ns switch turn-off delay time t d(off) r g = 6.3 , inductive C C 300 ns times fall time t f load switching operation C C 150 ns diode reverse recovery time** t rr i e = 100a C C 150 ns diode reverse recovery charge** q rr C 1.9 C c **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
3 CM100DUS-12F trench gate design dual igbtmod? 100 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 thermal and mechanical characteristics, o ml o o thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, t c reference C 0.35 c/w point per outline drawing thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module, t c reference C C 0.70 c/w point per outline drawing thermal resistance, junction to case r th(j-c') q per igbt 1/2 module, C 0.23** C c/w t c reference point under chip contact thermal resistance r th(c-f) per module, thermal grease applied C 0.07 C c/w ** if you use this value, r th(f-a) should be measured just under the chips. collect or-current , i c , (amperes) switching loss , e sw , (mj/pulse) switching loss vs. collect or current (typical) 10 0 10 1 10 2 10 0 10 -1 10 1 e sw(on ) e sw(off) collect or-emitter volt ag e, v ce , (v ol ts) collect or current , i c , (amperes) output chara cteristics (typical) 0 1 2 3 4 120 40 0 v ge = 20v 13 8 8.5 7.5 7 80 160 200 9 15 collect or-current , i c , (amperes) collect or-emitter sa tura tion volt age, v ce(sat ) , (v ol ts ) collect or-emitter sa tura tion volt ag e chara cteristics (typical) 3.0 0 40 8 0 120 160 2.5 2.0 1.5 1.0 0.5 0 200 v ge = 15v t j = 25c t j = 125c collect or-emitter volt age, v ce , (v ol ts) cap ac it ance, c ie s , c oe s , c res , (nf) cap a cit ance vs. v ce (typical) 10 -1 10 2 10 2 10 1 10 -1 10 0 v ge = 0v f = 1mhz c oe s c re s c ie s 10 0 10 1 0.5 1.0 1.5 2.0 2.5 3.0 10 0 10 1 10 2 emitter-collect or volt age, v ec , (v ol ts) free-wheel diode for w ard chara cteristics (typical) 10 3 emitter current , i e , (amperes) t j = 25c ga te-emitter volt ag e, v ge , (v ol ts) collect or-emitter sa tura tion volt ag e, v ce(sat ) , (v ol ts) collect or-emitter sa tura tion volt ag e chara cteristics (typical) 5 6 8 10 14 12 18 16 20 4 3 2 1 0 t j = 25c i c = 40a i c = 200 a i c = 100a v cc = 300v v ge = 15v r g = 6.3 ? t j = 125c half-bridge switching t j = 25c 9.5 10 11
4 CM100DUS-12F trench gate design dual igbtmod? 100 amperes/600 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 time, (s ) normalized transient thermal imped ance, z th(j-c) transient thermal impedance characteristics ( igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25c per unit base = r th(j-c ) = 0.35c/w z th = r th ? (normalized value) 10 -1 10 -2 10 -3 time, (s ) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25c per unit base = r th(j-c ) = 0.7c/w z th = r th ? (normalized value) 10 -1 10 -2 10 -3 t rr i rr collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 1 10 0 t d(off ) t d(on) t r v cc = 300v v ge = 15v r g = 6.3 w t j = 125 c v cc = 300v v ge = 15v r g = 6.3 w t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) 10 2 emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 2 10 0 10 1 10 2 10 1 10 0 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 100 90 0 500 600 700 800 16 12 8 4 0 200 400 300 v cc = 300v v cc = 200v i c = 100 a t rr i rr gate resistance, r g , () reverse recovery switching loss, e rr , (mj/pulse) 10 1 10 0 10 1 10 0 10 -1 10 2 reverse recovery switching loss vs . gate resistance (typical) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 1 10 1 10 2 10 0 10 -1 10 3 reverse recovery switching loss vs. emitter current (typical) v cc = 300v v ge = 15v i c = 100 a t j = 125 c inductive load c snubber at bus v cc = 300v v ge = 15v r g = 6.2 w t j = 125 c inductive load c snubber at bus
|
